Description
The ISSI IS61WV12816DAxx/DBxx and IS64WV12816D-
Bxx are high-speed, 2,097,152-bit static RAMs organized
as 131,072 words by 16 bits.It is fabricated using ISSI's
high-performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.Easy memory expansion is
Features
- HIGH SPEED: (IS61/64WV12816DALL/DBLL).
- High-speed access time: 8, 10, 12, 20 ns.
- Low Active Power: 135 mW (typical).
- Low Standby Power: 12 µW (typical)
CMOS standby LOW POWER: (IS61/64WV12816DALS/DBLS).
- High-speed access time: 25, 35 ns.
- Low Active Power: 55 mW (typical).
- Low Standby Power: 12 µW (typical)
CMOS standby.
- Single power supply.
- Vdd 1.65V to 2.2V (IS61WV12816DAxx).
- Vdd 2.4V to 3.6V (IS61/64WV12816DBxx).