IS61WV51216EDALL - 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

ISSI

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Datasheet Details

Part number	IS61WV51216EDALL
Manufacturer	ISSI
File Size	587.88 KB
Description	512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
Datasheet	IS61WV51216EDALL-ISSI.pdf

IS61WV51216EDALL Product details

Description

The ISSI IS61WV51216EDALL and IS61/64WV51216EDBLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits.It is fabri- cated using ISSI's high-performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.Easy memory expansion is provided b

Features

High-speed access times: 8, 10, 20 ns.
High-performance, low-power CMOS process.
Multiple center power and ground pins for greater noise immunity.
Easy memory expansion with CE and OE options.
CE power-down.
Fully static operation: no clock or refresh required.
TTL compatible inputs and outputs.
Single Power Supply.
Vdd = 1.65V to 2.2V (IS61WV51216EDALL).
Vdd = 2.4V to 3.6V (IS61/64WV51216EDBLL).

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Published: Jun 10, 2016 |