IS61WV3216DBLS, IS61WV3216DBLL - 32K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

ISSI

The IS61WV3216DBLS by ISSI is a 32K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM. Below is the official datasheet preview.

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IS61WV3216DBLS 32K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM by ISSI - Datasheet Preview — Official preview page of the **IS61WV3216DBLS** 32K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM datasheet (ISSI).

Datasheet Details

Part number	IS61WV3216DBLS, IS61WV3216DBLL
Manufacturer	ISSI
File Size	533.45 KB
Description	32K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
Datasheet	IS61WV3216DBLL-ISSI.pdf
Note	This datasheet PDF includes multiple part numbers: IS61WV3216DBLS, IS61WV3216DBLL. Please refer to the document for exact specifications by model.
Additional preview pages of the IS61WV3216DBLS datasheet.

IS61WV3216DBLS Product details

Description

The ISSI IS61WV3216DBLx and IS64WV3216DBLx are high-speed, 524,288-bit static RAMs organized as 32,768 words by 16 bits.It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.Easy memory expansion is provided by

Features

HIGH SPEED: (IS61/64WV3216DBLL).
High-speed access time: 8, 10, 12, 20 ns.
Low Active Power: 135 mW (typical).
Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV3216DBLS).
High-speed access time: 25, 35 ns.
Low Active Power: 55 mW (typical).
Low Standby Power: 12 µW (typical) CMOS standby.
Single power supply.
Vdd 2.4V to 3.6V (IS61/64WV3216DBxx).
Fully static operation: no clock or refresh requir.

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Published: Feb 17, 2024 |