IS61WV25632ALL - 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

ISSI

IS61WV25632ALL Datasheet Preview — Preview of IS61WV25632ALL PDF

Datasheet Details

Part number	IS61WV25632ALL
Manufacturer	ISSI
File Size	388.80 KB
Description	256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
Datasheet	IS61WV25632ALL-ISSI.pdf

IS61WV25632ALL Product details

Description

The ISSI IS61WV25632Axx/Bxx and IS64WV25632Bxx are high-speed, 8M-bit static RAMs organized as 256K words by 32 bits.It is fabricated using ISSI's high-per- formance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.Easy memory expansion is provided by u

Features

High-speed access times: 8, 10, 20 ns.
High-performance, low-power CMOS process.
Multiple center power and ground pins for greater noise immunity.
Easy memory expansion with CE and OE options.
CE power-down.
Fully static operation: no clock or refresh required.
TTL compatible inputs and outputs.
Single power supply Vdd 1.65V to 2.2V (IS61WV25632Axx) speed = 20ns for Vdd 1.65V to 2.2V Vdd 2.4V to 3.6V (IS61/64WV25632Bxx) spe.

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Published: Jun 10, 2016 |