IS61WV10248ALL - 1M x 8 HIGH-SPEED CMOS STATIC RAM

ISSI

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Datasheet Details

Part number	IS61WV10248ALL
Manufacturer	ISSI
File Size	379.88 KB
Description	1M x 8 HIGH-SPEED CMOS STATIC RAM
Datasheet	IS61WV10248ALL-ISSI.pdf

IS61WV10248ALL Product details

Description

The ISSI IS61WV10248ALL/BLL and IS64WV10248BLL are very high-speed, low power, 1M-word by 8-bit CMOS static RAM.The IS61WV10248ALL/BLL and IS64WV10248BLL are fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.Th

Features

High-speed access times: 8, 10, 20 ns.
High-performance, low-power CMOS process.
Multiple center power and ground pins for greater noise immunity.
Easy memory expansion with CE and OE options.
CE power-down.
Fully static operation: no clock or refresh required.
TTL compatible inputs and outputs.
Single power supply.
VDD 1.65V to 2.2V (IS61WV10248ALL) speed = 20ns for Vcc = 1.65V to 2.2V.
VDD 2.4V to 3.6V (.

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Published: Jun 10, 2016 |