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IS45R32160D - 512Mb SDRAM

Download the IS45R32160D datasheet PDF. This datasheet also covers the IS42R86400D variant, as both devices belong to the same 512mb sdram family and are provided as variant models within a single manufacturer datasheet.

Features

  • Clock frequency: 200, 166, 143 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave ISSI's 512Mb Synchronous DRAM achieves high-speed data.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS42R86400D-ISSI.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS45R32160F 512Mb SDRAM
IS45R16160D 256-MBIT SYNCHRONOUS DRAM
IS45R16320D 512Mb SDRAM
IS45R16320F 512Mb SDRAM
IS45R83200D 256-MBIT SYNCHRONOUS DRAM

Full PDF Text Transcription

Click to expand full text
IS42/45R86400D/16320D/32160D IS42/45S86400D/16320D/32160D 16Mx32, 32Mx16, 64Mx8 MAY 2015 512Mb SDRAM device OVERVIEW FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.
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