IS42SM16200C - 1M x 16Bits x 2Banks Low Power Synchronous DRAM

ISSI

Datasheet Details

Part number	IS42SM16200C
Manufacturer	ISSI
File Size	1.75 MB
Description	1M x 16Bits x 2Banks Low Power Synchronous DRAM
Datasheet	IS42SM16200C_ISSI.pdf

These IS42SM/RM/VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits.

JEDEC standard 3.3V, 2.5V, 1.8V power supply.
Auto refresh and self refresh.
All pins are compatible with LVCMOS interface.
4K refresh cycle / 64ms.
Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
Programmable CAS Latency : 2,3 clocks.
Programmable Driver Strength Control - Full Strength or 1/2, 1/4, 1/8 of Full Strength.
Deep Power Down Mode.

📁 IS42SM16200C Similar Datasheet

IS42S16100 - 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM (Integrated Silicon Solution)
IS42S16100E - 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM (Integrated Silicon Solution)
IS42S16128 - 128K words x 16 Bits x 2 Banks SDRAM (Integrated Silicon)
IS42S16160 - 16Meg x16 256-MBIT SYNCHRONOUS DRAM (Integrated Silicon Solution)
IS42S16160B - 256-MBIT SYNCHRONOUS DRAM (Integrated Silicon Solution)
IS42S16160D - 256-MBIT SYNCHRONOUS DRAM (Integrated Silicon Solution)
IS42S16320B - 32M x 16 512Mb SYNCHRONOUS DRAM (Integrated Silicon Solution)
IS42S16400 - SYNCHRONOUS DYNAMIC RAM (Integrated Silicon Solution)

Other Datasheets by ISSI

Published: Oct 22, 2013 |