IS42S16400 - SYNCHRONOUS DYNAMIC RAM

Integrated Silicon Solution

IS42S16400 Datasheet Preview — Preview of IS42S16400 PDF

Datasheet Details

Part number	IS42S16400
Manufacturer	Integrated Silicon Solution
File Size	583.66 KB
Description	SYNCHRONOUS DYNAMIC RAM
Datasheet	IS42S16400_IntegratedSiliconSolution.pdf

IS42S16400 Product details

Description

A0-A11 BA0, BA1 I/O0 to I/O15 CLK CKE CS RAS CAS Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE LDQM UDQM Vcc GND Vcc Q GNDQ NC Write Enable Lower Bye, Input/Output Mask Upper Bye, Input/Output Mask Power Ground Power Supply for I/O Pin Ground for I/O Pin No Connection This document contains TARGET

Features

Clock frequency: 166, 133, 100 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Internal bank for hiding row access/precharge.
Single 3.3V power supply.
LVTTL interface.
Programmable burst length.
(1, 2, 4, 8, full page).
Programmable burst sequence: Sequential/Interleave.
Self refresh modes.
4096 refresh cycles every 64 ms.
Random column address every clock cycle.

📁 IS42S16400 Similar Datasheet

IS42S16400A - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM (ISSI)
IS42S16400B - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM (ISSI)
IS42S16400B1 - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM (ISSI)
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IS42S16400J - SYNCHRONOUS DYNAMIC RAM (ISSI)
IS42S16400L - (IS42S8800x/ IS42S16400x) 2M x 8-Bit x 4-Bank SDRAM (ISSI)
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Other Datasheets by Integrated Silicon Solution

IS42S16400D - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400F - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100 - 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM
IS42S16100E - 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS42S16160 - 16Meg x16 256-MBIT SYNCHRONOUS DRAM
IS42S16160B - 256-MBIT SYNCHRONOUS DRAM

Published: Nov 20, 2006 |