IS42S16160 - 16Meg x16 256-MBIT SYNCHRONOUS DRAM

Integrated Silicon Solution

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Datasheet Details

Part number	IS42S16160
Manufacturer	Integrated Silicon Solution
File Size	814.68 KB
Description	16Meg x16 256-MBIT SYNCHRONOUS DRAM
Datasheet	IS42S16160-IntegratedSiliconSolution.pdf

IS42S16160 Product details

Description

A0-A12 Row Address Input A0-A8 Column Address Input BA0, BA1 Bank Select Address DQ0 to DQ15 Data I/O CLK System Clock Input CKE Clock Enable CS Chip Select RAS Row Address Strobe Command CAS Column Address Strobe Command WE DQML DQMH Vdd Vss Vddq Vssq NC Write Enable x16 Lower Byte, Input/Output Mask x16 Upper Byte, Input/Output Mask Power Ground Power Supply for I/O Pin Ground for I/O Pin No Connection Integrated Silicon Solution, Inc.

Features

Clock frequency: 166, 143, 133 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Internal bank for hiding row access/precharge.
Power supply IS42S16160 Vdd Vddq 3.3V 3.3V.
LVTTL interface.
Programmable burst length.
(1, 2, 4, 8, full page).
Programmable burst sequence: Sequential/Interleave.
Auto Refresh (CBR).
Self Refresh.
8K refresh cyc.

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Published: Sep 12, 2015 |