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TIP117 PNP Transistor

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Description

isc Silicon PNP Darlington Power Transistor TIP117 .
High DC Current Gain- : hFE = 1000(Min)@ IC= -1A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min). Low Collector-Emitter S.

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Datasheet Specifications

Part number
TIP117
Manufacturer
INCHANGE
File Size
208.93 KB
Datasheet
TIP117-INCHANGE.pdf
Description
PNP Transistor

Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous

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