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TIP112 NPN Transistor

TIP112 Description

isc Silicon NPN Darlington Power Transistor TIP112 .
High DC Current Gain- : hFE = 1000(Min)@ IC= 1A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min). Low Collector-Emitter Sat.

TIP112 Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2

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Datasheet Details

Part number
TIP112
Manufacturer
INCHANGE
File Size
209.16 KB
Datasheet
TIP112-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE TIP112-like datasheet