TIP112 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor TIP112 .
High DC Current Gain- : hFE = 1000(Min)@ IC= 1A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min). Low Collector-Emitter Sat.

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Datasheet Specifications

Part number: TIP112
Manufacturer: INCHANGE
File Size: 209.16 KB
Datasheet: TIP112-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2

TIP112 Distributors

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TIP112 NPN Transistor INCHANGE

INCHANGE TIP112-like datasheet