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TIP117F EPITAXIAL PLANAR PNP TRANSISTOR

TIP117F Description

SEMICONDUCTOR TECHNICAL DATA TIP117F EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL U.

TIP117F Features

* High DC Current Gain. : hFE=1000(Min. ), VCE=-4V, IC=-1A. Low Collector-Emitter Saturation Voltage. Complementary to TIP112F. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current DC VCBO

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Datasheet Details

Part number
TIP117F
Manufacturer
KEC
File Size
40.88 KB
Datasheet
TIP117F-KEC.pdf
Description
EPITAXIAL PLANAR PNP TRANSISTOR

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EPITAXIAL PLANAR PNP TRANSISTOR KEC
KEC TIP117F-like datasheet