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STP8NM60 N-Channel MOSFET

STP8NM60 Description

isc N-Channel MOSFET Transistor STP8NM60 .

STP8NM60 Features

* Drain Current
* ID= 8A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 1Ω(Max)
* 100% avalanche tested

STP8NM60 Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Pluse 32 A PD Total Dissipation @TC=25℃ 100 W TJ Max. Op

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Datasheet Details

Part number
STP8NM60
Manufacturer
INCHANGE
File Size
271.04 KB
Datasheet
STP8NM60-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE STP8NM60-like datasheet