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STP80N10F7 N-Channel MOSFET

STP80N10F7 Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP80N10F7 *.

STP80N10F7 Features

* Extremely low gate charge
* Ultra low on-resistance
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STP80N10F7 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 80 54 320 PD Total Dissipation 110 Tj Max. Operating Junction

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Datasheet Details

Part number
STP80N10F7
Manufacturer
INCHANGE
File Size
201.42 KB
Datasheet
STP80N10F7-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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