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STP11NM60ND N-Channel MOSFET

STP11NM60ND Description

isc N-Channel MOSFET Transistor STP11NM60ND .

STP11NM60ND Features

* Drain Current
* ID= 6.3A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max)
* 100% avalanche tested

STP11NM60ND Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 6.3 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 90 W TJ Max. O

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Datasheet Details

Part number
STP11NM60ND
Manufacturer
INCHANGE
File Size
271.44 KB
Datasheet
STP11NM60ND-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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