STD80N10F7 Datasheet - INCHANGE

STD80N10F7, N-Channel MOSFET

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STD80N10F7 *

Features

* Extremely low gate charge
* Ultra low on-resistance
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous@TC=25℃ TC=100℃ 70 48 A IDM Drain Current-Single Pulsed 280 A PD Total Dissipation 85 W Tj

STD80N10F7-INCHANGE.pdf