STD8NM50N Datasheet - INCHANGE

STD8NM50N, N-Channel MOSFET

isc N-Channel MOSFET Transistor

Features

* Drain Current
* ID= 5A@ TC=25℃
* Drain Source Voltage- : VDSS= 500V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 790mΩ(Max)
* 100% avalanche tested

Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 5 A PD Total Dissipation @TC=25℃ 45 W TJ Max. Operating Junction Temperature 150 ℃ Tst

STD8NM50N-INCHANGE.pdf