STD8NM60ND Datasheet - INCHANGE

STD8NM60ND, N-Channel MOSFET

isc N-Channel MOSFET Transistor STD8NM60ND

Features

* Drain Current
* ID= 7A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max)
* 100% avalanche tested

Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 28 A PD Total Dissipation @TC=25℃ 70 W TJ Max. Ope

STD8NM60ND-INCHANGE.pdf