SPA07N60C3 N-Channel MOSFET

INCHANGE

SPA07N60C3 Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPA07N60C3 *.

SPA07N60C3 Features

* With TO-220F package
* Low input capacitance and gate charge
* Low gate input resistance
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

SPA07N60C3 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±20 7.3 4.6 21.9 PD Total Dissipation @TC=25℃ 32

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SPA07N60C3 Datasheet Preview — Preview of SPA07N60C3 PDF

Datasheet Details

Part number: SPA07N60C3
Manufacturer: INCHANGE
File Size: 219.11 KB
Datasheet: SPA07N60C3-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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