SPA04N60C3 N-Channel MOSFET

INCHANGE

Description

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number: SPA04N60C3
Manufacturer: INCHANGE
File Size: 221.54 KB
Datasheet: SPA04N60C3-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* With TO-220F Package
* Drain Source Voltage- : VDSS=600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.95Ω(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 4.5 2.8 A IDM Drain Current-Single Pulsed 13.5 A PD Total Dis

SPA04N60C3 Distributors

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SPA04N60C3 N-Channel MOSFET INCHANGE

INCHANGE SPA04N60C3-like datasheet