Datasheet4U Logo Datasheet4U.com

S2000 - NPN Transistor

Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications Color TV switching regulator applications AB

📥 Download Datasheet

📁 Similar Datasheet

  • S2000 - Silicon NPN Transistor (Toshiba)
  • S2000 - SILICON POWER TRANSISTOR (SavantIC)
  • S2000A - Silicon NPN Transistor (Toshiba)
  • S2000A - SILICON POWER TRANSISTOR (SavantIC)
  • S2000AF - High voltage NPN Power transistor (ST Microelectronics)
  • S2000AF - SILICON POWER TRANSISTOR (SavantIC)
  • S2000AF1 - SILICON POWER TRANSISTOR (SavantIC)
  • S2000AFI - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (STMicroelectronics)
  • S2000N - Silicon NPN Transistor (Toshiba Semiconductor)
  • S2000N - SILICON POWER TRANSISTOR (SavantIC)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal output applications ·Color TV switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current 8 A ICM Collector Current-peak 15 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 125 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ S2000 isc website： www.iscsemi.
Published: |