S2010L
DESCRIPTION
- With TO-220 packaging
- High heat dissipation and durability
- Thermowatt construction for low thermal
- Glass passivated junctions and center gate fire for greater parameter uniformity and stability
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(RMS) ITSM PG(AV)
RMS on-state current
Surge non-repetitive on-state current ( 1/2 cycle,sine wave;Tc=25℃ )
Average gate power dissipation
Tj
Operating junction temperature
Tstg Storage temperature
Tp=8.3ms
50HZ 60HZ
200 10 83 100 0.5 -40~125 -40~150
UNIT
V V A A W ℃ ℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current VRM=VRRM
IDRM
Repetitive peak off-state current VDM=VDRM
Tj=25℃ Tj=100℃ Tj=125℃
VTM On-state voltage
ITM=...
