IXTQ182N055T - N-ChannelMOSFET

INCHANGE

Datasheet Details

Drain Source Voltage- : VDSS= 55V(Min).
Static Drain-Source On-Resistance : RDS(on) = 3.3mΩ(Max).
Fast Switching.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 IXTQ182N055T Similar Datasheet

IXTQ180N055T - (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET (IXYS Corporation)
IXTQ180N085T - Power MOSFET (IXYS Corporation)
IXTQ180N10T - Power MOSFET (IXYS Corporation)
IXTQ18N60P - Power MOSFET (IXYS)
IXTQ100N25P - N-Channel MOSFET (IXYS Corporation)
IXTQ102N15T - Power MOSFET (IXYS)
IXTQ102N20T - Power MOSFET (IXYS)
IXTQ10P50P - Power MOSFET (IXYS)

Other Datasheets by INCHANGE

Published: Nov 21, 2020 |