IXTQ18N60P - Power MOSFET

IXYS

Datasheet Details

z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density © 2006 IXYS All rights reserved DS99324E(03/06) Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS IXTQ 18N60P IXTV 18N60P IXTV 18N60PS Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) Min. Typ. Max. VDS = 20 V; ID = 0.5 ID25, pulse te.

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Published: Jun 15, 2010 |