IXTA60N20T N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number: IXTA60N20T
Manufacturer: INCHANGE
File Size: 250.84 KB
Datasheet: IXTA60N20T-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤ 40mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 150 PD Total Dissipation @TC=25℃ 300 Tj Operating Junction Temperature -55~175 Tstg Storage Te

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IXTA60N20T N-Channel MOSFET INCHANGE

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