IXTA60N10T N-Channel MOSFET

INCHANGE

IXTA60N10T Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTA60N10T *.

IXTA60N10T Features

* With TO-263(D2PAK) packaging
* Low gate charge
* High speed switching
* Low on-resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXTA60N10T Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 180 PD Total Dissipation 176 Tj Operating Junction Temperature -55~

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Datasheet Details

Part number: IXTA60N10T
Manufacturer: INCHANGE
File Size: 199.03 KB
Datasheet: IXTA60N10T-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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