IXFQ50N60X N-Channel MOSFET

INCHANGE

IXFQ50N60X Description

isc N-Channel MOSFET Transistor *.

IXFQ50N60X Features

* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) ≤73mΩ@VGS= 10V
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXFQ50N60X Applications

* Easy to Mount
* Space Savings
* High Power Density
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 50 A IDM Drain Current-Single Plused 120 A PD To

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Datasheet Details

Part number: IXFQ50N60X
Manufacturer: INCHANGE
File Size: 253.01 KB
Datasheet: IXFQ50N60X-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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