Datasheet4U Logo Datasheet4U.com

IRLR3103 - N-Channel MOSFET

IRLR3103 Description

isc N-Channel MOSFET Transistor IRLR3103, IIRLR3103 *.

IRLR3103 Features

* Static drain-source on-resistance: RDS(on)≤19mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Fast Switching
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS

IRLR3103 Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

📥 Download Datasheet

Preview of IRLR3103 PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRLR3103
Manufacturer
INCHANGE
File Size
237.81 KB
Datasheet
IRLR3103-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • IRLR3103PbF - Power MOSFET (International Rectifier)
  • IRLR3105 - HEXFET Power MOSFET (International Rectifier)
  • IRLR3105PBF - HEXFET Power MOSFET (International Rectifier)
  • IRLR3110ZPBF - Power MOSFET (International Rectifier)
  • IRLR3114ZPbF - Power MOSFET (International Rectifier)
  • IRLR3303 - Power MOSFET (International Rectifier)
  • IRLR3303PBF - HEXFET Power MOSFET (International Rectifier)
  • IRLR3410 - HEXFET Power MOSFET (International Rectifier)

📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE IRLR3103-like datasheet