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IRLB4030 N-Channel MOSFET

IRLB4030 Description

isc N-Channel MOSFET Transistor IRLB4030，IIRLB4030 *.

IRLB4030 Features

* Static drain-source on-resistance: RDS(on) ≤4.3mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRLB4030 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 180 IDM Drain Current-Single Pulsed 730 PD Total Dissipation @TC=25℃ 370 Tj Max. Operating Junction Temperature 175 Tstg Storage

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Datasheet Details

Part number
IRLB4030
Manufacturer
INCHANGE
File Size
241.09 KB
Datasheet
IRLB4030-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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