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IRLB3036 N-Channel MOSFET

IRLB3036 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB3036， IIRLB3036 *.

IRLB3036 Features

* Static drain-source on-resistance: RDS(on) ≤2.4mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRLB3036 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 195 IDM Drain Current-Single Pulsed 1100 PD Total Dissipation @TC=25℃ 380 Tj Max. Operating Junction Temperature 175 Tstg Storage

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Datasheet Details

Part number
IRLB3036
Manufacturer
INCHANGE
File Size
247.42 KB
Datasheet
IRLB3036-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRLB3036-like datasheet