IRL7833S N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor IRL7833S *.
Static drain-source on-resistance: RDS(on) ≤3. 100% avalanche tested. Minimum Lot-to-Lot variations for robust device perfor.

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Datasheet Specifications

Part number: IRL7833S
Manufacturer: INCHANGE
File Size: 265.08 KB
Datasheet: IRL7833S-INCHANGE.pdf
Description: N-Channel MOSFET

Applications

* .
* Provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 30 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous 150 A

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IRL7833S N-Channel MOSFET INCHANGE

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