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IRL7833LPbF - Power MOSFET

Download the IRL7833LPbF datasheet PDF (IRL7833PbF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Features

  • ents, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the paral.

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Note: The manufacturer provides a single datasheet file (IRL7833PbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Consumer Use l Lead-Free PD - 95270 IRL7833PbF IRL7833SPbF IRL7833LPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg :30V 3.8m 32nC Benefits l Very Low RDS(on) at 4.
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