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IRL520N TO-220F N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number
IRL520N
Manufacturer
INCHANGE
File Size
250.28 KB
Datasheet
IRL520N_INCHANGE.pdf
Description
TO-220F N-Channel MOSFET

Features

* Low drain-source on-resistance: RDS(on) ≤ 180mΩ (max)
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 8.1 IDM Drain Current-Single Pulsed 35 PD Total Dissipation @TC=25℃ 30 Tj Max. Operating Junction Temperature 175 Tstg Storage Te

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