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IRF2804S N-Channel MOSFET

IRF2804S Description

isc N-Channel MOSFET Transistor *.
Static drain-source on-resistance: RDS(on) ≤6mΩ@VGS= 10V. 100% avalanche tested. Minimum Lot-to-Lot variations for robust device performa.

IRF2804S Applications

* Provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 40 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@TC=100℃ 20

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Datasheet Details

Part number
IRF2804S
Manufacturer
INCHANGE
File Size
265.14 KB
Datasheet
IRF2804S-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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