Datasheet4U Logo Datasheet4U.com

IRF2805S N-Channel MOSFET

IRF2805S Description

isc N-Channel MOSFET Transistor *.

IRF2805S Features

* With TO-263( D2PAK ) packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IRF2805S
* APPLI

IRF2805S Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 135 96 700 PD Total Dissipation 200 Tj Operat

📥 Download Datasheet

Preview of IRF2805S PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRF2805S
Manufacturer
INCHANGE
File Size
247.77 KB
Datasheet
IRF2805S-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • IRF2805SPbF - HEXFET Power MOSFET (International Rectifier)
  • IRF2805L - AUTOMOTIVE MOSFET (International Rectifier)
  • IRF2805LPbF - HEXFET Power MOSFET (International Rectifier)
  • IRF2804 - HEXFET Power MOSFET (International Rectifier)
  • IRF2804L - HEXFET Power MOSFET (International Rectifier)
  • IRF2804LPbF - HEXFET Power MOSFET (International Rectifier)
  • IRF2804PbF - HEXFET Power MOSFET (International Rectifier)
  • IRF2804S - HEXFET Power MOSFET (International Rectifier)

📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE IRF2805S-like datasheet