Datasheet4U Logo Datasheet4U.com

IRF2805 N-Channel MOSFET

IRF2805 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF2805，IIRF2805 *.

IRF2805 Features

* Static drain-source on-resistance: RDS(on) ≤4.7mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF2805 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 75 IDM Drain Current-Single Pulsed 700 PD Total Dissipation @TC=25℃ 330 Tj Max. Operating Junction Temperature 175 Tstg Storage Te

📥 Download Datasheet

Preview of IRF2805 PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRF2805
Manufacturer
INCHANGE
File Size
241.04 KB
Datasheet
IRF2805-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • IRF2805L - AUTOMOTIVE MOSFET (International Rectifier)
  • IRF2805LPbF - HEXFET Power MOSFET (International Rectifier)
  • IRF2805S - AUTOMOTIVE MOSFET (International Rectifier)
  • IRF2805SPbF - HEXFET Power MOSFET (International Rectifier)
  • IRF2804 - HEXFET Power MOSFET (International Rectifier)
  • IRF2804L - HEXFET Power MOSFET (International Rectifier)
  • IRF2804LPbF - HEXFET Power MOSFET (International Rectifier)
  • IRF2804PbF - HEXFET Power MOSFET (International Rectifier)

📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE IRF2805-like datasheet