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IPB041N04N N-Channel MOSFET

IPB041N04N Description

isc N-Channel MOSFET Transistor *.

IPB041N04N Features

* With TO-263( D2PAK ) packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPB041N04N Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 80 400 PD Total Dissipation 94 Tj Operating J

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Datasheet Details

Part number
IPB041N04N
Manufacturer
INCHANGE
File Size
254.05 KB
Datasheet
IPB041N04N-INCHANGE.pdf
Description
N-Channel MOSFET

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