IPB049NE7N3 N-Channel MOSFET

INCHANGE

IPB049NE7N3 Description

isc N-Channel MOSFET Transistor *.

IPB049NE7N3 Features

* With TO-263( D2PAK ) packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IPB049NE7N3
* AP

IPB049NE7N3 Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 80 320 PD Total Dissipation 150 Tj Operating

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Datasheet Details

Part number: IPB049NE7N3
Manufacturer: INCHANGE
File Size: 209.56 KB
Datasheet: IPB049NE7N3-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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