IPB042N10N3G 100V MOSFET

Infineon Technologies

IPB042N10N3G Description

IPB042N10N3 G MOSFET OptiMOSª3 Power-Transistor, 100 V .

IPB042N10N3G Features

* N-channel, normal level
* Excellent gate charge x RDS(on) product (FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant

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Datasheet Details

Part number: IPB042N10N3G
Manufacturer: Infineon ↗ Technologies
File Size: 976.51 KB
Datasheet: IPB042N10N3G-InfineonTechnologies.pdf
Description: 100V MOSFET

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100V MOSFET Infineon Technologies

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