FCPF190N65FL1 N-Channel MOSFET

INCHANGE

FCPF190N65FL1 Description

isc N-Channel MOSFET Transistor FCPF190N65FL1 *.

FCPF190N65FL1 Features

* With TO-220F packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FCPF190N65FL1 Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 20.6 A IDM Drain Current-Single Pulsed 61.8 A PD Total Dissipation

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Datasheet Details

Part number: FCPF190N65FL1
Manufacturer: INCHANGE
File Size: 243.46 KB
Datasheet: FCPF190N65FL1-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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