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FCPF190N60-F152 N-Channel MOSFET

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Description

FCPF190N60-F152 * N-Channel MOSFET FCPF190N60-F152 .
N-Channel SuperFET® II MOSFET 600 V, 20. 650 V @TJ = 150°C. Max. Ultra low gate cha.

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Features

* 650 V @TJ = 150°C
* Max. RDS(on) = 199 mΩ
* Ultra low gate charge (typ. Qg = 57 nC)
* Low effective output capacitance (typ. Coss. eff = 160 pF)
* 100% avalanche tested SuperFET®II MOSFET is ON Semiconductor’s first generation of high voltage super-junction

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FCPF190N60E FCPF190N65FL1 FCPF11N60 FCPF11N60F FCPF11N60NT FCPF11N60T

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FCPF190N60-F152 N-Channel MOSFET ON Semiconductor
ON Semiconductor FCPF190N60-F152-like datasheet
FCPF190N60-F154
FCPF190N60
FCPF190N60E-F154
FCPF190N65F
FCPF190N65FL1-F154