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FCPF165N65S3L1 N-Channel MOSFET

FCPF165N65S3L1 Description

isc N-Channel MOSFET Transistor FCPF165N65S3L1 *.

FCPF165N65S3L1 Features

* With TO-220F packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FCPF165N65S3L1 Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous;@Tc=25℃ 19 A IDM Drain Current-Single Pulsed 47.5 A PD Total Dissipation

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Datasheet Details

Part number
FCPF165N65S3L1
Manufacturer
INCHANGE
File Size
243.30 KB
Datasheet
FCPF165N65S3L1-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE FCPF165N65S3L1-like datasheet