Description
FCP16N60N / FCPF16N60NT * N-Channel SupreMOS® MOSFET FCP16N60N / FCPF16N60NT N-Channel SupreMOS® MOSFET 600 V, 16 A, 199 mΩ November 2013 F.
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling proce.
Features
* RDS(on) = 170 mΩ (Typ. ) @ VGS = 10 V, ID = 8 A
* Ultra Low Gate Charge (Typ. Qg = 40.2 nC)
* Low Effective Output Capacitance (Typ. Coss(eff. ) = 176 pF)
* 100% Avalanche Tested
Applications
* such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D
GDS
TO-220
GDS
TO-220F
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS
ID
IDM EAS IAR EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage Drain