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FCP260N65S3 N-Channel MOSFET

FCP260N65S3 Description

isc N-Channel MOSFET Transistor *.

FCP260N65S3 Features

* Drain Source Voltage- : VDSS= 650V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 260mΩ(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FCP260N65S3 Applications

* Switch-Mode and Resonant-Mode Power Supplies
* DC-DC Converters
* AC and DC Motor Drives
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 12 A IDM Drain

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Datasheet Details

Part number
FCP260N65S3
Manufacturer
INCHANGE
File Size
254.76 KB
Datasheet
FCP260N65S3-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE FCP260N65S3-like datasheet