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FCP22N60N N-Channel MOSFET

FCP22N60N Description

FCP22N60N / FCPF22N60NT * N-Channel SupreMOS® MOSFET FCP22N60N / FCPF22N60NT N-Channel SupreMOS® MOSFET 600 V, 22 A, 165 mΩ November 2013 F.
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling proce.

FCP22N60N Features

* BVDSS > 650 V @ TJ = 150oC
* RDS(on) = 140 mΩ (Typ. ) @ VGS = 10 V, ID = 11 A
* Ultra Low Gate Charge (Typ. Qg = 45 nC)
* Low Effective Output Capacitance (Typ. Coss(eff. ) = 196.4 pF)
* 100% Avalanche Tested

FCP22N60N Applications

* such as PFC, server/telecom power, FPD TV power, ATX power, and industria

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N-Channel MOSFET Fairchild Semiconductor
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