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FCP190N65S3 N-Channel MOSFET

FCP190N65S3 Description

isc N-Channel MOSFET Transistor *.

FCP190N65S3 Features

* With TO-220 packaging
* High speed switching
* Very high commutation ruggedness
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operationz

FCP190N65S3 Applications

* PFC stages
* LCD & PDP TV
* Power supply
* Switching applications INCHANGE Semiconductor FCP190N65S3
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Curren

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Datasheet Details

Part number
FCP190N65S3
Manufacturer
INCHANGE
File Size
203.27 KB
Datasheet
FCP190N65S3-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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