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FCP190N65F - N-Channel MOSFET

FCP190N65F Description

isc N-Channel MOSFET Transistor FCP190N65F *.

FCP190N65F Features

* With TO-220 packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FCP190N65F Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 20.6 A IDM Drain Current-Single Pulsed 61.8 A PD Total Dissipation

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Datasheet Details

Part number
FCP190N65F
Manufacturer
INCHANGE
File Size
252.70 KB
Datasheet
FCP190N65F-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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