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BU508DW NPN Transistor

BU508DW Description

isc Silicon NPN Power Transistor .
High Voltage-VCES= 1500V(Min. Collector Current- IC = 8. Built-in Integrated Diode. Minimum Lot-to-Lot variations for robust dev.

BU508DW Applications

* Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8.0 A ICM Col

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Datasheet Details

Part number
BU508DW
Manufacturer
INCHANGE
File Size
210.03 KB
Datasheet
BU508DW-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BU508DW-like datasheet