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BU508DFI NPN Transistor

BU508DFI Description

isc Silicon NPN Power Transistor .
High Voltage-VCES= 1500V(Min. Collector Current- IC = 8. Built-in Damper Diode. Minimum Lot-to-Lot variations for robust device.

BU508DFI Applications

* Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 8.0 A ICM Co

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Datasheet Details

Part number
BU508DFI
Manufacturer
INCHANGE
File Size
212.79 KB
Datasheet
BU508DFI-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BU508DFI-like datasheet