BDY49 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min). Excellent Safe Operating Area. High Current Capability. 100% avalanche t.

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Datasheet Specifications

Part number: BDY49
Manufacturer: INCHANGE
File Size: 199.58 KB
Datasheet: BDY49-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high current, high speed, high power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous 100 V 6 V 30 A IB Base Curre

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BDY49 NPN Transistor INCHANGE

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